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| SEMICONDUCTOR TECHNICAL DATA General Description It's mainly suitable for battery pack or power management in cell phone, and PDA. A F KMA4D5P20X P-CH Trench MOSFET FEATURES VDSS=-20V, ID=-4.5A. Drain-Source ON Resistance. : RDS(ON)=60m (Max.) @ VGS=-4.5V,.ID=-4.5A : RDS(ON)=110m (Max.) @ VGS=-2.5V,.ID=-3.3A Super High Dense Cell Design for Extremely Low RDS(ON) G 1 3 6 4 B1 B C E D1 D D2 DIM A B B1 C D D1 D2 E F G MILLIMETERS _ 2.926 + 0.05 _ 2.80 + 0.15 _ 1.626 + 0.05 _ 0.15 + 0.05 1.25 MAX _ 1.10 + 0.05 0~0.10 _ 0.45 + 0.08 _ 0.95 + 0.05 _ 0.40 + 0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Source Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range DC ) SYMBOL VDSS VGSS ID * IDP* IS RATING -20 12 4.5 16 -1.3 2.0 1.3 150 -55 150 62.5 /W UNIT V V A A W TSOP-6 Pulsed Marking Type Name Ta=25 Ta=70 PD * Tj Tstg RthJA * MPA Lot No. Thermal Resistance, Junction to Ambient * : Surface Mounted on 1 1 FR4 Board, t 5sec. PIN CONNECTION (TOP VIEW) D DDD D D G 1 6 D D S 2 5 3 4 G S 2006. 8. 22 Revision No : 1 1/5 KMA4D5P20X ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Forward Transconductance Dynamic (Note 3) ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL BVDSS IDSS Vth IGSS RDS(ON) gfs ID=-250 A, VGS=0V VGS=0V, VDS=-20V VGS=0V,VDS=-16V, VDS=VGS, ID=-250 A VGS= 12V, VDS=0V (Note 2) (Note 2) (Note 2) Tj=70 (Note 3) -20 -0.6 - 49 85 7 -1 -5 -1.3 100 60 110 - V A V nA m S VGS=-4.5V, ID=-4.5A VGS=-2.5V, ID=-3.3A VDS=-5V, ID=-4.5A Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Source-Drain Diode Ratings Continuous Source Current Diode Forward Voltage Note 2) Pulse test : Pulse width 300 Qg Qgs Qgd td(on) tr td(off) tf VDS=-10V, RD=2.2 VGS=-4.5V (Fig.1) VDS=-10V, RD=2.2 VGS=-4.5V RG=6 (Fig.2) - 8.5 1.8 2.9 12 32 64 40 ns nC IS VSD , Duty Cycle 2% VGS < Vth IS=-4.5A, VGS=0V (Note 1) (Note 2) 1 FR4 Board. - - -1.3 -1.3 A V Note 1) Based on thermal dissipation from junction to ambient while mounted on a 1 Note 3) Guaranteed by design, not subject to production testing. 2006. 8. 22 Revision No : 1 2/5 KMA4D5P20X ID - VDS 20 -3.5V -5V -20 ID - VGS VD=VG Drain Current ID (A) 16 -4.5V -4V -3V Drain Current ID (A) -15 -55 C 25 C 125 C 12 -2.5V -10 8 4 0 0 -0.5 -1 -1.5 -2 -2.5 -3 -2V -1.5V -5 0 0 -1 -2 -3 -4 -5 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Vth - Tj Normalized Threshold Voltage Vth 0.5 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -75 -50 -25 0 25 50 75 100 125 150 RDS(ON) - ID 0.4 On - Resistance RDS(ON) (m) ID= -250A 0.32 0.24 0.16 VGS = -2.5V 0.08 VGS = -4.5V 0 0 -5 -10 -15 -20 Junction Temperature Tj ( C) Drain Current ID (A) IS - VSD -100 RDS(ON) - Tj 1.6 1.5 VGS = -4.5V ID = -4.2A Reverse Drain Current IS (A) Normalized On Resistance 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -75 -50 -25 0 25 50 75 100 125 150 -10 -1 Tj=150 C Tj=25 C -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2006. 8. 22 Revision No : 1 3/5 KMA4D5P20X C - VDS 1000 800 -5 Frequency = 1MHz Qg - VGS Gate - Source Voltage VGS (V) VD = -10V ID = -4.5A -4 Capacitance (pF) Ciss 600 400 Coss -3 -2 200 0 Crss -1 0 0 2 4 6 8 0 -5 -10 -15 -20 10 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Rth Normalized Transient Thermal Resistance 101 100 Duty=0.5 0.2 10-1 0.1 0.05 0.02 PDM t1 10-2 Single Pulse t2 - Duty Factor, D= t1/t2 Tj(max) - Ta - RthJA = PD 10-3 10-2 10-1 100 101 102 103 10-3 10-4 Square Wave Pulse Duration (sec) 2006. 8. 22 Revision No : 1 4/5 KMA4D5P20X Fig. 1 Gate Charge VGS -4.5 V Schottky Diode ID 0.5 VDSS 1.0 mA ID VDS VGS Q Qgs Qgd Qg Fig. 2 Resistive Load Switching RL td(on) ton tr td(off) toff tf 0.5 VDSS 6 VGS 10% VDS -4.5 V VGS VDS 90% 2006. 8. 22 Revision No : 1 5/5 |
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